IXZR18N50 Datasheet, PDF (1/4 Pages) IXYS Corporation – Z-MOS RF Power MOSFET

IXZR18N50 & IXZR18N50A/B
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOS_TM MOSFET Process
Optimized for RF Operation
Ideal for Class C, D, & E Applications
V_DSS
I_D25
= 500 V
= 19 A
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_c = 25°C
T_c = 25°C, pulse width limited by T_JM
T_c = 25°C
T_c = 25°C
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
Maximum Ratings
500 V
500 V
±20 V
±30 V
19 A
95 A
19 A
TBD mJ
5 V/ns
>200 V/ns
R_DS(on) ≤ _{0.37 Ω}
P_DC
= 350 W
P_DC
P_DHS
P_DAMB
R_thJC
R_thJHS
T_c = 25°C, Derate 4.4W/°C above 25°C
T_c = 25°C
350 W
TBD W
3.0 W
TBD C/W
TBD C/W
Symbol Test Conditions
Characteristic Values
(T_J = 25°C unless otherwise specified)
min. typ. max.
V_DSS
V_GS = 0 V, I_D = 4 ma
500
V
V_GS(th)
V_DS = V_GS, I_D = 250µΑ
4.6
V
I_GSS
I_DSS
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8V_DSS
V_GS=0
=125C
T_J = 25C
T_J
±100 nA
50 µA
1 mA
R_DS(on)
V_GS = 20 V, I_D = 0.5I_D25
0.37
Ω
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
g_fs
V_DS = 50 V, I_D = 0.5I_D25, pulse
test
6.7
S
T_J
-55
+175 °C
T_JM
175
°C
T_stg
-55
+ 175 °C
T_L
1.6mm(0.063 in) from case for 10
s
300
°C
Weight
3.5
g
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density