IXZR16N60 Datasheet, PDF (1/4 Pages) IXYS Corporation – Z-MOS RF Power MOSFET

IXZR16N60 & IXZR16N60A/B
Z-MOS RF Power MOSFET
N-ChaNnCnehlaEnnheal ^{EncnehmanecnetmMeondteMSowdietch} Mode RF MOSFET
Low CLaopwac^Qitgaanncde ^RZg-MOS_TM MOSFET Process
OptimHiziegdh fdovr/RdtF Operation
Ideal fNoranColassescoCn,dDS, ^{w&itEchAinpgplications}
V_DSS
I_D25
= 600 V
= 18 A
Symbol
V_DSS
V_DGR
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Maximum Ratings
600
V
600
V
R_DS(on) ≤ _{0.56 Ω}
P_DC
=
350
V_GS
V_GSM
Continuous
Transient
±20
V
±30
V
I_D25
T_c = 25°C
I_DM
T_c = 25°C, pulse width limited by T_JM
18
A
90
A
I_AR
E_AR
T_c = 25°C
T_c = 25°C
18
A
TBD
mJ
dv/dt
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
5
>200
V/ns
V/ns
P_DC
P_DHS
P_DAMB
R_thJC
R_thJHS
T_c = 25°C, Derate 4.4W/°C above 25°C
T_c = 25°C
350
W
TBD
W
3.0
W
TBD C/W
TBD C/W
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
T_J
T_JM
T_stg
T_L
Weight
Test Conditions
Characteristic Values
(T_J = 25°C unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 4 ma
600
V
V_DS = V_GS, I_D = 250µΑ
4.6
V
V_GS = ±20 V_DC, V_DS = 0
±100 nA
V_DS = 0.8V_DSS
V_GS=0
T_J = 25C
T_J =125C
50 µA
1 mA
V_GS = 20 V, I_D = 0.5I_D25
0.53
Ω
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V_DS = 50V, I_D = 0.5I_D25, pulse test
6.4
S
-55
+175 °C
175
°C
-55
+ 175 °C
1.6mm(0.063 in) from case for 10 s
300
°C
3.5
g
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• High Performance RF Z-MOS^TM
• Optimized for RF and high speed
• Common Source RF Package
A = Gate Source Drain
B = Drain Source Gate
• Isolated Package, no insulator
required