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IXZR08N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – Z-MOS RF Power MOSFET | |||
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IXZR08N120 & IXZR08N120A/B
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for RF Operation
Ideal for Class C, D, & E Applications
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDC
PDHS
PDAMB
RthJC
RthJHS
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ⤠IDM, di/dt ⤠100A/µs, VDD ⤠VDSS,
Tj ⤠150°C, RG = 0.2â¦
IS = 0
Tc = 25°C, Derate 4.4W/°C above 25°C
Tc = 25°C
Maximum Ratings
1200 V
1200 V
±20 V
±30 V
8A
40 A
8A
TBD mJ
5 V/ns
>200 V/ns
250 W
180 W
3.0 W
0.60 C/W
0.85 C/W
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ
TJM
Tstg
TL
Weight
min. typ.
max.
VGS = 0 V, ID = 4 ma
1200
V
VDS = VGS, ID = 250µÎ
4
4.9
6
V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
50 µA
1 mA
VGS = 15 V, ID = 0.5ID25
1.4
â¦
Pulse test, t ⤠300µS, duty cycle d ⤠2%
VDS = 20 V, ID = 0.5ID25, pulse test
4
5.5
6.5
S
-55
+175 °C
175
°C
-55
+ 175 °C
1.6mm(0.063 in) from case for 10 s
300
°C
3.5
g
VDSS = 1200 V
ID25
= 8.0 A
RDS(on) ⤠1.5 â¦
PDC
= 250 W
Features
⢠Isolated Substrate
â high isolation voltage (>2500V)
â excellent thermal transfer
â Increased temperature and power
cycling capability
⢠IXYS advanced Z-MOS process
⢠Low gate charge and capacitances
â easier to drive
â faster switching
⢠Low RDS(on)
⢠Very low insertion inductance (<2nH)
⢠No beryllium oxide (BeO) or other
hazardous materials
Advantages
⢠High Performance RF Z-MOSTM
⢠Optimized for RF and high speed
switching at frequencies to 100MHz
⢠Common Source RF Package
⢠Easy to mountâno insulators needed
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