IXZH10N50LA Datasheet, PDF (1/9 Pages) IXYS Corporation – RF Power MOSFET

IXZH10N50LA/B
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOS_TM MOSFET Process
Optimized for Linear Operation in Common Source Mode
V_DSS
I_D25
= 500 V
= 10 A
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_c = 25°C
T_c = 25°C, pulse width limited by T_JM
T_c = 25°C
T_c = 25°C
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
Maximum Ratings
500 V
500 V
±20 V
±30 V
10 A
60 A
16 A
TBD mJ
5 V/ns
>200 V/ns
150V (operating)
P_DC
P_DHS
P_DAMB
R_thJC
R_thJHS
(1)
T_c = 25°C, Derate 6.0W/°C above 25°C
T_c = 25°C
250 W
180 W
3W
0.60 C/W
0.85 C/W
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
T_J
T_JM
T_stg
T_L
Weight
V_GS = 0 V, I_D = 4 ma
V_DS = V_GS, I_D = 250µΑ
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8V_DSS
V_GS=0
T_J = 25C
T_J =125C
min.
500
3.5
V_GS = 20 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V_DS = 50 V, I_D = 0.5I_D25, pulse test
-55
-55
1.6mm(0.063 in) from case for 10 s
typ. max.
4.95
6.5
±100
50
1
1.0
3.8
+175
+175
+ 175
300
4
V
V ^Features
nA
• IXYS RF Low Capacitance Z-MOS^TM
Process
µA
• Very low insertion inductance (<2nH)
mA ^{• No beryllium oxide (BeO) or other}
hazardous materials
Ω
Advantages
S
• High Performance RF Z-MOS^TM
• Common Source RF Package
°C
A = Gate Source Drain
B = Drain Source Gate
°C
°C
°C
g