IXZ4DF18N50 Datasheet, PDF (1/7 Pages) IXYS Corporation – RF Power MOSFET & DRIVER

IXZ4DF18N50
RF Power MOSFET & DRIVER
Driver / MOSFET Combination
DEIC-515 Driver combined with IXZ318N50 MOSFET
Gate driver matched to MOSFET
500 Volts
19 A
0.29 Ohms
Features
• Isolated substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power cycling capability
• IXYS advanced Z-MOS process
• Low R_ds(ON)
• Very low insertion inductance(<2nH)
• No beryllium oxide (BeO) or other hazardous materials
• Built using the advantages and compatibility of CMOS and IXYS
HDMOS™ processes
• Latch-up protected
• Low quiescent supply current
Advantages
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density
• Single package reduces size and heat sink area
Applications
• Class D or E Switching
Amplifier
• Multi MHz Switch Mode
Power Supplies (SMPS)
Description
The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination
specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications. The
IXZ4DF18N50 in pulse mode can provide 95A of peak current while producing voltage rise and fall times of less
than 4ns, and minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire
operating range. Designed with small internal delays, the IXZ4DF18N50 is suitable for higher power operation
where combiners are used. Its features and wide safety margin in operating voltage and power make the
IXZ4DF18N50 unmatched in performance and value.
The IXZ4DF18N50 is packaged in DEI's low inductance RF package incorporating DEI's RF layout techniques
to minimize stray lead inductances for optimum switching performance. The IXZ4DF18N50 is a surface-
mountable device.
Figure 1.
Functional Diagram