IXZ4DF12N100 Datasheet, PDF (1/7 Pages) IXYS Corporation – RF Power MOSFET & DRIVER

IXZ4DF12N100
RF Power MOSFET & DRIVER
Driver / MOSFET Combination
DEIC-515 Driver combined with a DE375-102N12A MOSFET
Gate driver matched to MOSFET
1000 Volts
12 A
0.7 Ohms
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power cycling capability
• IXYS advanced Z-MOS process
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other hazardous materials
• Built using the advantages and compatibility of CMOS and IXYS
HDMOS™ processes
• Latch-Up Protected
• Low Quiescent Supply Current
Advantages
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density
• Single package reduces size and heat sink area
Applications
• Class D or E Switching
Amplifier
• Multi MHz Switch Mode
Power Supplies (SMPS)
Description
The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically
designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications. The IXZ4DF12N100 in
pulse mode can provide 72A of peak current while producing voltage rise and fall times of less than 5ns, and
minimum pulse widths of 8ns. The input of the driver is fully immune to latch up over the entire operating
range. Designed with small internal delays, the IXZ4DF12N100 is suitable for higher power operation where
combiners are used. Its features and wide safety margin in operating voltage and power make the
IXZ4DF12N100 unmatched in performance and value.
The IXZ4DF12N100 is packaged in DEIs low inductance RF package incorporating DEI's RF layout techniques
to minimize stray lead inductances for optimum switching performance. The IXZ4DF12N100 is a surface-
mountable device.
Figure 1.
Functional Diagram