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IXZ316N60 Datasheet, PDF (1/4 Pages) IXYS Corporation – Z-MOS RF Power MOSFET | |||
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IXZ316N60
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode Switch Mode RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for RF Operation
Ideal for Class C, D, & E Applications
VDSS
ID25
= 600 V
= 18 A
Symbol Test Conditions
Maximum Ratings
RDS(on) ⤠0.47 â¦
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDC
PDHS
PDAMB
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ⤠IDM, di/dt ⤠100A/µs, VDD ⤠VDSS,
Tj ⤠150°C, RG = 0.2â¦
IS = 0
Tc = 25°C, Derate 4.4W/°C above 25°C
Tc = 25°C
600 V
600 V
±20 V
±30 V
18 A
90 A
18 A
TBD mJ
5 V/ns
>200 V/ns
880 W
440 W
3.0 W
PDC
GATE
= 880 W
DRAIN
RthJC
RthJHS
0.17 C/W
0.34 C/W
SG1 SG2
SD1 SD2
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ
TJM
Tstg
TL
Weight
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 4 ma
600
V
VDS = VGS, ID = 250µÎ
3.2
4.0
5.5
V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
50 µA
1 mA
VGS = 15 V, ID = 0.5ID25
Pulse test, t ⤠300µS, duty cycle d ⤠2%
0.44 0.47
â¦
VDS = 50V, ID = 0.5ID25, pulse test
4.0
5.2
S
-55
+175 °C
175
°C
-55
+ 175 °C
1.6mm(0.063 in) from case for 10 s
300
°C
3.5
g
Features
⢠Isolated Substrate
â high isolation voltage (>2500V)
â excellent thermal transfer
â Increased temperature and power
cycling capability
⢠IXYS advanced Z-MOS process
⢠Low gate charge and capacitances
â easier to drive
â faster switching
⢠Low RDS(on)
⢠Very low insertion inductance (<2nH)
⢠No beryllium oxide (BeO) or other
hazardous materials
Advantages
⢠Optimized for RF and high speed
⢠Easy to mountâno insulators needed
⢠High power density
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