IXZ308N120 Datasheet, PDF (1/3 Pages) IXYS Corporation – Z-MOS RF Power MOSFET

IXZ308N120
Z-MOS RF Power MOSFET
N-Channel Enhancement Mode LSiwneitcahr 1M7o5dMeHRzFRMFOMSOFSEFTET
LowCCapaapcaictaitnacneceZ-ZM-MOOS_TS_MTMMMOOSFSEFTETPrPorcoecsesss
Optimized for RLiFneOapr eOrapteiorantion
Ideal for Class ACB, D&, C&,EBAropapdliccaastito&nsCommunications Applications
V_DSS
I_D25
= 1200 V
= 8.0 A
Symbol Test Conditions
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_DC
P_DHS
P_DAMB
R_thJC
R_thJHS
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_c = 25°C
T_c = 25°C, pulse width limited by T_JM
T_c = 25°C
T_c = 25°C
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
T_c = 25°C, Derate 4.4W/°C above 25°C
T_c = 25°C
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
T_J
T_JM
T_stg
T_L
Weight
V_GS = 0 V, I_D = 4 ma
V_DS = V_GS, I_D = 250µΑ
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8V_DSS
V_GS=0
T_J = 25C
T_J =125C
min.
1200
3.5
V_GS = 20 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V_DS = 50 V, I_D = 0.5I_D25, pulse test
-55
-55
1.6mm(0.063 in) from case for 10 s
Maximum Rat-
ings
1200 V
1200 V
±20 V
±30 V
8A
40 A
8A
TBD mJ
5 V/ns
R_DS(on) =
P_DC
=
2.1 Ω
880 W
>200 V/ns
880 W
GATE
440 W
DRAIN
3.0 W
0.17 C/W
0.34 C/W
typ. max.
V
6.5
V
±100 nA
50 µA
1 mA
2.1
Ω
10.1
S
+175 °C
175
°C
+ 175 °C
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced Z-MOS process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
• Easy to mount—no insulators needed
• High power density
300
°C
3.5
g