IXZ12210N50L Datasheet, PDF (1/4 Pages) IXYS Corporation – RF Power MOSFET

IXZ12210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOS_TM MOSFET Process
Optimized for Linear Operation
Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ1210N50L single ended device unless otherwise
Symbol Test Conditions
Maximum Ratings
V_DSS
I_D25
= 500 V
= 10 A
125V (operating)
175MHz
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_c = 25°C
T_c = 25°C, pulse width limited by
T_JM
T_c = 25°C
T_c = 25°C
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤
V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
500
500
±20
±30
10
60
16
TBD
5
>200
V
V
V
V
A
A
A
mJ
V/ns
V/ns
Per Device
Total
P_DC
P_DHS
P_DAMB
R_thJC
R_thJHS
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
T_J
T_JM
T_stg
T_L
Weight
T_c = 25°C, Derate 6.0W/°C above
25°C
T_c = 25°C
180
150
0.83
1.00
V_GS = 0 V, I_D = 4 ma
V_DS = V_GS, I_D = 250µΑ
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8V_DSS
V_GS=0
T_J = 25C
T_J =125C
min.
500
3.5
V_GS = 20 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
V_DS = 50 V, I_D = 0.5I_D25, pulse test
-55
-55
1.6mm(0.063 in) from case for 10 s
360
W
300
W
10
0.42
0.50
typ.
4.83
1.0
3.8
300
4
W
C/W
C/W
max.
V
6.5
V
±100 nA
50 µA
1 mA
Ω
S
+175 °C
+175 °C
+ 175 °C
°C
g
Features
• IXYS RF Low Capacitance Z-MOS^TM
Process
• Very low insertion inductance (<2nH)
Advantages
• High Performance RF Package
• Easy to mount—no insulators needed
• Standard RF Package
(1) Thermal specifications are for the pack-
age, not per transistor