IXYX120N120B3 Datasheet, PDF (1/2 Pages) IXYS Corporation – Advance Technical Information

1200V XPT^TM IGBT
GenX3^TM
High-Speed IGBT
for 10-30 kHz Switching
Advance Technical Information
IXYK120N120B3
IXYX120N120B3
V_CES = 1200V
I_C110 = 120A
V
CE(sat)

2.2V
t_fi(typ) = 260ns
TO-264P (IXYK)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_LRMS
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1M
Continuous
Transient
1200
V
1200
V
±20
V
±30
V
T_C = 25°C (Chip Capability)
Terminal Current Limit
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 1
Clamped Inductive Load
T_C = 25°C
320
A
160
A
120
A
800
A
60
A
2
J
I_CM = 240
A
 V_CE V_CES
1500
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in
N/lb
TO-264P
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250A, V_GE = 0V
V_GE(th)
I_C = 1mA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150C
I_GES
V_CE = 0V, V_GE = 20V
V_CE(sat)
I_C = 100A, V_GE = 15V, Note 1
T_J = 150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
25 A
1.5 mA
200 nA
1.8
2.2 V
2.4
V
G
C
Tab
E
PLUS247 (IXYX)
G
G
C
E
G = Gate
C = Collector
Tab
E = Emitter
Tab = Collector
Features
 _{Square RBSOA}
 _{International Standard Packages}
 _{Positive Thermal Coefficient of}
Vce(sat)
 _{Avalanche Rated}
 _{High Current Handling Capability}
Advantages
 _{High Power Density}
 _{Low Gate Drive Requirement}
Applications
 _{High Frequency Power Inverters}
 _UPS
 _{Motor Drives}
 _SMPS
 _{PFC Circuits}
 _{Battery Chargers}
 _{Welding Machines}
 _{Lamp Ballasts}
© 2015 IXYS CORPORATION, All Rights Reserved
DS100646(02/15)