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IXYT80N90C3 Datasheet, PDF (1/6 Pages) IXYS Corporation – XPTTM 900V IGBT | |||
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XPTTM 900V IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
IXYT80N90C3
IXYH80N90C3
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1Mï
Continuous
Transient
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 2ï
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
900
V
900
V
±20
V
±30
V
165
A
160
A
80
A
360
A
ICM = 160
A
ï£ @VCE VCES
830
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
6
g
Symbol
Test Conditions
(TJ = 25ï°C, Unless Otherwise Specified)
BVCES
IC = 250ïA, VGE = 0V
VGE(th)
IC = 250ïA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 150ï°C
IGES
VCE = 0V, VGE = ï±20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
TJ = 150ï°C
Characteristic Values
Min. Typ. Max.
950
V
3.5
5.5 V
25 ïA
750 ïA
ï ï ï ï ï ï ï ï ï ï ï ï ï ï±100 nA
2.3
2.7 V
2.9
V
VCES = 900V
IC110 = 80A
V
CE(sat)
ï ï ï£
ï 2.7V
tfi(typ) = 86ns
TO-268 (IXYT)
G
E
C (Tab)
TO-247 (IXYH)
G
C
E
C (Tab)
G = Gate
C = Collector
E = Emiiter Tab = Collector
Features
ï¬ Optimized for Low Switching Losses
ï¬ Square RBSOA
ï¬ Positive Thermal Coefficient of
Vce(sat)
ï¬ International Standard Packages
Advantages
ï¬ High Power Density
ï¬ Low Gate Drive Requirement
Applications
ï¬ High Frequency Power Inverters
ï¬ UPS
ï¬ Motor Drives
ï¬ SMPS
ï¬ PFC Circuits
ï¬ Battery Chargers
ï¬ Welding Machines
ï¬ Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100446B(12/15)
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