IXYR100N120C3 Datasheet, PDF (1/6 Pages) IXYS Corporation – 1200V XPTTM IGBT

1200V XPT^TM IGBT
GenX3^TM
(Electrically Isolated Tab)
High-Speed IGBT
for 20-50 kHz Switching
IXYR100N120C3
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Capability)
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 1Ω
Clamped Inductive Load
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
104
A
58
A
480
A
50
A
1.2
J
I_CM = 200
A
≤ @V_CE V_CES
484
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
2500
V~
20..120/4.5..27
5
N/lb.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 100A, V_GE = 15V, Note 1
T_J = 150°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
25 μA
1.25 mA
±100 nA
2.9
3.5 V
4.1
V
V_CES =
I_C110
=
V ≤ _CE(sat)
t_fi(typ) =
1200V
58A
3.5V
110ns
ISOPLUS247^TM
G
CE
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Mounting Surface}
z _{2500V~ Electrical Isolation}
z _{Positive Thermal Coefficient of}
Vce(sat)
z _{Avalanche Rated}
z _{High Current Handling Capability}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2012 IXYS CORPORATION, All Rights Reserved
DS100406B(03/13)