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IXYQ30N65B3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – Advance Technical Information | |||
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Advance Technical Information
XPTTM 650V IGBT
GenX3TM w/ Diode
Extreme Light Punch Through
IGBT for 5-30kHz Switching
IXYH30N65B3D1
IXYQ30N65B3D1
VCES = 650V
IC110 = 30A
V
CE(sat)
ï ï ï£
ï 2.1V
tfi(typ) = 33ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1Mï
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TVJ = 150°C, RG = 10ï
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C
RG = 82ï, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-247
TO-3P
Maximum Ratings
650
V
650
V
±20
V
±30
V
70
A
30
A
50
A
160
A
10
A
300
mJ
ICM = 60
A
ï£ @VCE VCES
5
μs
270
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6.0
5.5
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
TO-247 (IXYH)
G
C
E
Tab
TO-3P (IXYQ)
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
ï¬ Optimized for Low 5-30kHz Switching
ï¬ Square RBSOA
ï¬ Anti-Parallel Fast Diode
ï¬ Avalanche Rated
ï¬ Short Circuit Capability
Advantages
ï¬ High Power Density
ï¬ Extremely Rugged
ï¬ Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25ï°C, Unless Otherwise Specified)
BVCES
IC = 250ïA, VGE = 0V
VGE(th)
IC = 250ïA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 150ï°C
IGES
VCE = 0V, VGE = ï±20V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
TJ = 150ï°C
Characteristic Values
Min. Typ. Max.
650
V
3.5
6.0 V
10 ïA
1.5 mA
ï ï ï ï ï ï ï ï ï ï ï ï ï ï±100 nA
1.8
2.1 V
2.2
V
Applications
ï¬ Power Inverters
ï¬ UPS
ï¬ Motor Drives
ï¬ SMPS
ï¬ PFC Circuits
ï¬ Battery Chargers
ï¬ Welding Machines
ï¬ Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100637(11/14)
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