IXYP30N120C3 Datasheet, PDF (1/6 Pages) IXYS Corporation – High-Speed IGBT for 20-50 kHz Switching

1200V XPT^TM
GenX3^TM IGBTs
High-Speed IGBT
for 20-50 kHz Switching
IXYP30N120C3
IXYH30N120C3
V_CES = 1200V
I_C110 = 30A
V
CE(sat)

3.3V
t_fi(typ) = 88ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1M
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 10
Clamped Inductive Load
T_C = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-220
TO-247
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
75
A
30
A
145
A
20
A
400
mJ
I_CM = 60
A
 V_CE V_CES
500
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10 Nm/lb.in
3
g
6
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250A, V_GE = 0V
V_GE(th)
I_C = 250A, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150C
I_GES
V_CE = 0V, V_GE = 20V
V_CE(sat)
I_C = 30A, V_GE = 15V, Note 1
T_J = 150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
25 A
750 μA
100 nA
3.3 V
3.7
V
TO-220 (IXYP)
GC _E
Tab
TO-247 AD (IXYH)
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
 _{High Voltage Package}
 _{Optimized for Low Switching Losses}
 _{Square RBSOA}
 _{Positive Thermal Coefficient of}
Vce(sat)
 _{Avalanche Rated}
 _{International Standard Packages}
Advantages
 _{High Power Density}
 _{Low Gate Drive Requirement}
Applications
 _{High Frequency Power Inverters}
 _UPS
 _{Motor Drives}
 _SMPS
 _{PFC Circuits}
 _{Battery Chargers}
 _{Welding Machines}
 _{Lamp Ballasts}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100385D(9/13)