IXYP20N65C3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – XPTTM 650V IGBT

XPT^TM 650V IGBT
GenX3^TM w/Diode
IXYA20N65C3D1
IXYP20N65C3D1
Extreme Light Punch Through
IGBT for 20-60kHz Switching
V_CES = 650V
I_C110 = 20A
V
CE(sat)

2.50V
t_fi(typ) = 28ns
TO-263 AA (IXYA)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
I_A
E_AS
SSOA
(RBSOA)
t_sc
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1M
Continuous
Transient
650
V
650
V
±20
V
±30
V
T_C = 25°C
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 20
Clamped Inductive Load
V_GE = 15V, V_CE = 360V, T_J = 150°C
R_G = 82, Non Repetitive
T_C = 25°C
50
A
20
A
18
A
105
A
10
A
200
mJ
I_CM = 40
A
 V_CE V_CES
10
μs
200
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Torque (TO-220)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in
N/lb
TO-263
TO-220
2.5
g
3.0
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250A, V_GE = 0V
V_GE(th)
I_C = 250A, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150C
I_GES
V_CE = 0V, V_GE = 20V
V_CE(sat)
I_C = 20A, V_GE = 15V, Note 1
T_J = 150C
Characteristic Values
Min. Typ. Max.
650
V
3.5
6.0 V
10 A
400 A
100 nA
2.27
2.44
2.50 V
V
© 2015 IXYS CORPORATION, All Rights Reserved
G
E
C (Tab)
TO-220AB (IXYP)
GC _E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
 _{Optimized for 20-60kHz Switching}
 _{Square RBSOA}
 _{Avalanche Rated}
 _{Anti-Parallel Fast Diode}
 _{Short Circuit Capability}
 _{International Standard Packages}
Advantages
 _{High Power Density}
 _{Extremely Rugged}
 _{Low Gate Drive Requirement}
Applications
 _{Power Inverters}
 _UPS
 _{Motor Drives}
 _SMPS
 _{PFC Circuits}
 _{Battery Chargers}
 _{Welding Machines}
 _{Lamp Ballasts}
 _{High Frequency Power Inverters}
DS100576C(3/15)