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IXYP15N65C3D1 Datasheet, PDF (1/6 Pages) IXYS Corporation – Preliminary Technical Information
Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/Diode
IXYA15N65C3D1
IXYP15N65C3D1
Extreme Light Punch Through
IGBT for 20-60kHz Switching
VCES = 650V
IC110 = 15A
V
CE(sat)

2.5V
tfi(typ) = 28ns
TO-263 AA (IXYA)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
650
V
650
V
±20
V
±30
V
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
38
A
15
A
23
A
80
A
5
A
100
mJ
ICM = 30
A
 @VCE VCES
8
μs
200
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Torque (TO-220)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in
N/lb
TO-263
TO-220
2.5
g
3.0
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 150C
IGES
VCE = 0V, VGE = 20V
VCE(sat)
IC = 15A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
650
V
3.5
6.0 V
10 A
400 A
100 nA
1.96
2.45
2.50 V
V
© 2015 IXYS CORPORATION, All Rights Reserved
G
E
C (Tab)
TO-220AB (IXYP)
GC E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
 Optimized for 20-60kHz Switching
 Square RBSOA
 Avalanche Rated
 Anti-Parallel Fast Diode
 Short Circuit Capability
 International Standard Packages
Advantages
 High Power Density
 Extremely Rugged
 Low Gate Drive Requirement
Applications
 Power Inverters
 UPS
 Motor Drives
 SMPS
 PFC Circuits
 Battery Chargers
 Welding Machines
 Lamp Ballasts
 High Frequency Power Inverters
DS100575B(02/15)