IXYN80N90C3H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – Preliminary Technical Information

Preliminary Technical Information
900V XPT^TM IGBT
GenX3^TM w/ Diode
High-Speed IGBT
for 20-50 kHz Switching
IXYN80N90C3H1
E
V_CES = 900V
I_C90 = 70A
V
CE(sat)

2.7V
t_fi(typ) = 86ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_F110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1M
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 150°C, R_G = 2
Clamped Inductive Load
T_C = 25°C
50/60Hz
I_ISOL  1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
900
V
900
V
±20
V
±30
V
115
A
70
A
42
A
340
A
I_CM = 160
A
 @V_CE V_CES
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in
1.3/11.5 Nm/lb.in
30
g
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
 ither emitter terminal can be used as
Main or Kelvin Emitter
Features
 _{Optimized for Low Switching Losses}
 _{Square RBSOA}
 _{Isolation Voltage 2500V~}
 _{Anti-Parallel Sonic Diode}
 _{Positive Thermal Coefficient of}
Vce(sat)
 _{High Current Handling Capability}
 _{International Standard Package}
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 60A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
950
V
3.5
5.5 V
25 μA
1.5 mA
±100 nA
2.3
2.7 V
2.9
V
Advantages
 _{High Power Density}
 _{Low Gate Drive Requirement}
Applications
 _{High Frequency Power Inverters}
 _UPS
 _{Motor Drives}
 _SMPS
 _{PFC Circuits}
 _{Battery Chargers}
 _{Welding Machines}
 _{Lamp Ballasts}
© 2015 IXYS CORPORATION, All Rights Reserved
DS100522A(12/15)