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IXYN75N65C3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – International Standard Package
Advance Technical Information
XPTTM 650V IGBT
GenX3TM w/ Diode
IXYN75N65C3D1
Extreme Light Punch through
IGBT for 20-60kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TVISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C (Chip Capability)
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
E
Maximum Ratings
650
V
650
V
±20
V
±30
V
150
A
75
A
60
A
360
A
30
A
300
mJ
ICM = 150
A
 VCE VCES
8
μs
600
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
VCES = 650V
IC110 = 75A
V
CE(sat)

2.3V
tfi(typ) = 60ns
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
 either emitter terminal can be used as
Main or Kelvin Emitter
Features
 International Standard Package
 miniBLOC, with Aluminium Nitride
Isolation
 2500V~ Isolation Voltage
 Optimized for 20-60kHz Switching
 Square RBSOA
 Avalanche Rated
 Short Circuit Capability
 High Current Handling Capability
 Anti-Parallel Fast Diode
Advantages
 High Power Density
 Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 150C
IGES
VCE = 0V, VGE = 20V
VCE(sat)
IC = 60A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
650
V
3.5
6.0 V
25 A
3 mA
100 nA
1.8
2.3 V
2.2
V
Applications
 Power Inverters
 UPS
 Motor Drives
 SMPS
 PFC Circuits
 Battery Chargers
 Welding Machines
 Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100661(4/15)