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IXYN120N65C3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – International Standard Package | |||
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Advance Technical Information
XPTTM 650V IGBT
GenX3TM w/ Diode
IXYN120N65C3D1
Extreme Light Punch through
IGBT for 20-60kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TVISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1Mï
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2ï
Clamped Inductive Load
VGE = 15V, VCE = 400V, TJ = 150°C
RG = 82ï, Non Repetitive
TC = 25°C
50/60Hz
IISOL ï£ï 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
E
Maximum Ratings
650
V
650
V
±20
V
±30
V
190
A
100
A
72
A
620
A
60
A
1
J
ICM = 240
A
ï£ VCE VCES
8
μs
830
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
VCES = 650V
IC110 = 100A
V
CE(sat)
ï ï ï£
ï 2.8V
tfi(typ) = 46ns
SOT-227B, miniBLOC
E153432
Eï
G
Eï
C
G = Gate, C = Collector, E = Emitter
ï either emitter terminal can be used as
Main or Kelvin Emitter
Features
ï¬ International Standard Package
ï¬ miniBLOC, with Aluminium Nitride
Isolation
ï¬ 2500V~ Isolation Voltage
ï¬ Optimized for 20-60kHz Switching
ï¬ Square RBSOA
ï¬ Avalanche Rated
ï¬ Short Circuit Capability
ï¬ High Current Handling Capability
ï¬ Anti-Parallel Fast Diode
Advantages
ï¬ High Power Density
ï¬ Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25ï°C, Unless Otherwise Specified)
BVCES
IC = 250ïA, VGE = 0V
VGE(th)
IC = 250ïA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 150ï°C
IGES
VCE = 0V, VGE = ï±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 150ï°C
Characteristic Values
Min. Typ. Max.
650
V
3.5
6.0 V
25 ïA
1.25 mA
ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï±100 nA
2.3
2.8 V
2.8
V
Applications
ï¬ Power Inverters
ï¬ UPS
ï¬ Motor Drives
ï¬ SMPS
ï¬ PFC Circuits
ï¬ Battery Chargers
ï¬ Welding Machines
ï¬ Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100665(5/15)
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