IXYN120N120C3 Datasheet, PDF (1/6 Pages) IXYS Corporation – Advance Technical Information

1200V XPT^TM IGBTs
GenX3^TM
High-Speed IGBTs
for 20-50 kHz Switching
Advance Technical Information
IXYN120N120C3
V_CES = 1200V
I_C110 = 120A
V
CE(sat)

3.20V
t_fi(typ) = 96ns
E
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_LRMS
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1M
Continuous
Transient
T_C= 25°C (Chip Capability)
Terminal Current Limit
T_C= 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 1
Clamped Inductive Load
T_C = 25°C
50/60Hz
I_ISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
240
A
200
A
120
A
700
A
60
A
2
J
I_CM = 240
A
 V_CE V_CES
1200
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in
1.3/11.5 Nm/lb.in
30
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250A, V_GE = 0V
V_GE(th)
I_C = 500A, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150C
I_GES
V_CE = 0V, V_GE = 20V
V_CE(sat)
I_C = I_C110, V_GE = 15V, Note 1
T_J = 150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
25 A
1.5 mA
100 nA
2.55
3.40
3.20 V
V
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
 either emitter terminal can be used as
Main or Kelvin Emitter
Features
 _{Optimized for Low Switching Losses}
 _{Square RBSOA}
 _{miniBLOC, with Aluminium Nitride}
Isolation
 _{International Standard Package}
 _{Isolation Voltage 2500V~}
 _{Positive Thermal Coefficient of}
Vce(sat)
 _{Avalanche Rated}
 _{High Current Handling Capability}
Advantages
 _{High Power Density}
 _{Low Gate Drive Requirement}
Applications
 _{High Frequency Power Inverters}
 _UPS
 _{Motor Drives}
 _SMPS
 _{PFC Circuits}
 _{Battery Chargers}
 _{Welding Machines}
 _{Lamp Ballasts}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100560(9/13)