IXYN100N65A3 Datasheet, PDF (1/6 Pages) IXYS Corporation – Optimized for Low Conduction Losses

650V XPT^TM IGBT
GenX3^TM
Ultra Low-Vsat PT IGBT
for up to 5kHz Switching
Preliminary Technical Information
IXYN100N65A3
V_CES = 650V
I_C110 = 100A
V
CE(sat)

1.80V
t_fi(typ) = 122ns
E
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
t_sc
(SCSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1M
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 2
Clamped Inductive Load
V_GE = 15V, V_CE = 360V, T_J = 150°C
R_G = 82, Non Repetitive
T_C = 25°C
50/60Hz
I_ISOL  1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
650
V
650
V
±20
V
±30
V
170
A
100
A
460
A
50
A
600
mJ
I_CM = 200
A
 V_CE V_CES
8
μs
600
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 70A, V_GE = 15V, Note 1
T_J = 150°C
Characteristic Values
Min. Typ. Max.
650
V
3.5
6.0 V
25 μA
500 μA
±200 nA
1.44
1.62
1.80 V
V
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
 _{Optimized for Low Conduction Losses}
 _{miniBLOC, with Aluminium Nitride}
Isolation
 _{International Standard Package}
 _{Isolation Voltage 2500V~}
 _{Optimized for up to 5kHz Switching}
 _{Square RBSOA}
 _{Avalanche Rated}
 _{Short Circuit Capability}
 _{High Current Handling Capability}
Advantages
 _{High Power Density}
 _{Low Gate Drive Requirement}
Applications
 _UPS
 _{Motor Drives}
 _SMPS
 _{Battery Chargers}
 _{Low Frequency Power Inverters}
© 2014 IXYS CORPORATION, All Rights Reserved
DS100547A(7/14)