IXYN100N120C3H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – 1200V XPTTM IGBT GenX3TM w/ Diode

1200V XPT^TM IGBT
GenX3^TM w/ Diode
High-Speed IGBT
for 20-50 kHz Switching
Preliminary Technical Information
IXYN100N120C3H1
V_CES =
I_C110
=
V ≤ _CE(sat)
t_fi(typ) =
1200V
62A
3.5V
110ns
E
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Capability)
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 125°C, R_G = 1Ω
Clamped Inductive Load
T_C = 25°C
50/60Hz
I_ISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
134
A
62
A
42
A
440
A
50
A
1.2
J
I_CM = 200
A
≤ @V_CE V_CES
690
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.3/11.5 Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 100A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
50 μA
3 mA
±100 nA
2.9
3.5 V
3.9
V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{Isolation Voltage 2500V~}
z _{Anti-Parallel Ultra Fast Diode}
z _{Positive Thermal Coefficient of}
Vce(sat)
z _{Avalanche Rated}
z _{High Current Handling Capability}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100407A(03/13)