IXYL60N450 Datasheet, PDF (1/4 Pages) IXYS Corporation – Preliminary Technical Information

Preliminary Technical Information
High Voltage
XPT^TM IGBT
(Electrically Isolated Tab)
IXYL60N450
V_CES = 4500V
I_C110 = 38A
V
CE(sat)

3.30V
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
V_ISOL
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1M
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 4.7
Clamped Inductive Load
T_C = 25°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Force
Maximum Ratings
4500
V
4500
V
±20
V
±30
V
90
A
38
A
680
A
I_CM = 120
A
1500
V
417
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
40..120 / 9..27
N/lb
50/60 Hz, RM, t = 1min
4000
V~
8
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
BV_CES
I_C = 250μA, V_GE = 0V
4500
V
V_GE(th)
I_C = 250μA, V_CE = V_GE
3.0
5.0 V
I_CES
V_CE = 4000V, V_GE = 0V
25 μA
Note 1, T_J = 90°C
75
μA
I_GES
V_CE = 0V, V_GE = ±20V
±300 nA
V_CE(sat)
I_C = 60A, V_GE = 15V, Note 1
T_J = 125°C
2.64 3.30 V
3.46
V
ISOPLUS i5-Pak^TM
G
E
C
G = Gate
C = Collector
Isolated Tab
E = Emitter
Features
 _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
 _{Isolated Mounting Surface}
 _{4000V~ Electrical Isolation}
 _{High Blocking Voltage}
 _{High Peak Current Capability}
 _{Low Saturation Voltage}
Advantages
 _{Low Gate Drive Requirement}
 _{High Power Density}
Applications
 _{Switch-Mode and Resonant-Mode}
Power Supplies
 _{Uninterruptible Power Supplies (UPS)}
 _{Laser Generators}
 _{Capacitor Discharge Circuits}
 _{AC Switches}
© 2016 IXYS CORPORATION, All Rights Reserved
DS100578A(4/16)