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IXYK100N65B3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – International Standard Packages
Advance Technical Information
XPTTM 650V IGBT
GenX3TM w/ Diode
IXYK100N65B3D1
IXYX100N65B3D1
Extreme Light Punch Through
IGBT for 10-30kHz Switching
VCES =
IC110 =
V
CE(sat)

tfi(typ) =
650V
100A
1.85V
73ns
TO-264 (IXYK)
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
650
V
650
V
±20
V
±30
V
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 10, Non Repetitive
TC = 25°C
225
A
160
A
100
A
67
A
460
A
50
A
600
mJ
ICM = 200
A
 @VCE VCES
8
μs
830
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
Maximum Lead Temperature for Soldering
300
1.6 mm (0.062in.) from Case for 10s
260
Mounting Torque (TO-264)
1.13/10
Mounting Force (PLUS247)
20..120 /4.5..27
°C
°C
Nm/lb.in
N/lb
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 150°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 70A, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
650
V
3.5
6.0 V
50 μA
3 mA
±100 nA
1.53
1.77
1.85 V
V
G
C
E
Tab
PLUS247 (IXYX)
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
 International Standard Packages
 Optimized for 10-30kHz Switching
 Square RBSOA
 Avalanche Rated
 Short Circuit Capability
 Anti-Parallel Ultra Fast Diode
 High Current Handling Capability
Advantages
 High Power Density
 Low Gate Drive Requirement
Applications
 Power Inverters
 UPS
 Motor Drives
 SMPS
 PFC Circuits
 Battery Chargers
 Welding Machines
 Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100633(10/14)