IXYK100N120B3 Datasheet, PDF (1/6 Pages) IXYS Corporation – Preliminary Technical Information

Preliminary Technical Information
1200V XPT^TM IGBTs
GenX3^TM
IXYK100N120B3
IXYX100N120B3
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
V_CES =
I_C110 =
V ≤ _CE(sat)
t_fi(typ) =
1200V
100A
2.6V
240ns
TO-264 (IXYK)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_LRMS
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1MΩ
Continuous
Transient
1200
V
1200
V
±20
V
±30
V
T_C = 25°C (Chip Capability)
Terminal Current Limit
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 1Ω
Clamped Inductive Load
T_C = 25°C
225
A
160
A
100
A
530
A
50
A
1.2
J
I_CM = 200
A
≤ @V_CE V_CES
1150
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = I_C110, V_GE = 15V, Note 1
T_J = 150°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
25 μA
1 mA
±100 nA
2.20
2.76
2.60 V
V
G
C
E
Tab
PLUS247 (IXYX)
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
z _{Optimized for 5-30kHZ Switching}
z _{Square RBSOA}
z _{Positive Thermal Coefficient of}
Vce(sat)
z _{Avalanche Rated}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100519A(03/13)