IXYJ20N120C3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – 1200V XPTTM IGBT

1200V XPT^TM IGBT
GenX3^TM w/ Diode
(Electrically Isolated Tab)
High-Speed IGBT
for 20-50 kHz Switching
IXYJ20N120C3D1
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
V_ISOL
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1M
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 10
Clamped Inductive Load
T_C = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
50/60 Hz, RM, t = 1min
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
21
A
9
A
15
A
84
A
10
A
400
mJ
I_CM = 40
A
 @V_CE V_CES
105
W
-55 ... +150
150
-55 ... +150
300
260
1.13/10
°C
°C
°C
°C
°C
Nm/lb.in.
2500
V~
5
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250A, V_GE = 0V
V_GE(th)
I_C = 250A, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125C
I_GES
V_CE = 0V, V_GE = 20V
V_CE(sat)
I_C = 20A, V_GE = 15V, Note 1
T_J = 150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
25 A
350 μA
100 nA
3.4 V
4.0
V
V_CES = 1200V
I_C110 = 9A
V
CE(sat)

3.4V
t_fi(typ) = 108ns
ISO TO-247^TM
E153432
G
C
E
G = Gate
E = Emitter
Isolated Tab
C = Collector
Features
 _{Optimized for Low Switching Losses}
 _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
 _{Isolated Mounting Surface}
 _{2500V~ Electrical Isolation}
 _{Square RBSOA}
 _{Positive Thermal Coefficient of}
Vce(sat)
 _{Anti-Parallel Ultra Fast Diode}
 _{Avalanche Rated}
Advantages
 _{High Power Density}
 _{Low Gate Drive Requirement}
Applications
 _{High Frequency Power Inverters}
 _UPS
 _{Motor Drives}
 _SMPS
 _{PFC Circuits}
 _{Battery Chargers}
 _{Welding Machines}
 _{Lamp Ballasts}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100486B(8/13)