IXYH80N90C3 Datasheet, PDF (1/6 Pages) IXYS Corporation – XPTTM 900V IGBT

XPT^TM 900V IGBT
GenX3^TM
High-Speed IGBT
for 20-50 kHz Switching
IXYT80N90C3
IXYH80N90C3
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_LRMS
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1M
Continuous
Transient
T_C = 25°C (Chip Capability)
Terminal Current Limit
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 150°C, R_G = 2
Clamped Inductive Load
T_C = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
900
V
900
V
±20
V
±30
V
165
A
160
A
80
A
360
A
I_CM = 160
A
 @V_CE V_CES
830
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
6
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250A, V_GE = 0V
V_GE(th)
I_C = 250A, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150C
I_GES
V_CE = 0V, V_GE = 20V
V_CE(sat)
I_C = 60A, V_GE = 15V, Note 1
T_J = 150C
Characteristic Values
Min. Typ. Max.
950
V
3.5
5.5 V
25 A
750 A
100 nA
2.3
2.7 V
2.9
V
V_CES = 900V
I_C110 = 80A
V
CE(sat)

2.7V
t_fi(typ) = 86ns
TO-268 (IXYT)
G
E
C (Tab)
TO-247 (IXYH)
G
C
E
C (Tab)
G = Gate
C = Collector
E = Emiiter Tab = Collector
Features
 _{Optimized for Low Switching Losses}
 _{Square RBSOA}
 _{Positive Thermal Coefficient of}
Vce(sat)
 _{International Standard Packages}
Advantages
 _{High Power Density}
 _{Low Gate Drive Requirement}
Applications
 _{High Frequency Power Inverters}
 _UPS
 _{Motor Drives}
 _SMPS
 _{PFC Circuits}
 _{Battery Chargers}
 _{Welding Machines}
 _{Lamp Ballasts}
© 2015 IXYS CORPORATION, All Rights Reserved
DS100446B(12/15)