IXYH75N120B4 Datasheet, PDF (1/6 Pages) IXYS Corporation – Advance Technical Information

Advance Technical Information
1200V XPT^TM IGBT
GenX4^TM
Extreme Light Punch Through
IGBT for 5-15 kHz Switching
IXYH75N120B4
V_CES = 1200V
I_C110 = 75A
V
CE(sat)

2.20V
t_fi(typ) = 150ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_LRMS
I_C110
I_CM
SSOA
(RBSOA)
T_SC
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1M
Continuous
Transient
T_C = 25°C
Terminal Current Limit
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 150°C, R_G = 3
Clamped Inductive Load
V_GE = 15V, T_J = 150°C,
R_G = 10, V_CE = 600V, Non-Repetitive
T_C = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
240
A
160
A
75
A
440
A
I_CM = 150
A
1360
V
10
1150
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
μs
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
TO-247 AD
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
 _{Optimized for 5-15kHZ Switching}
 _{Short Circuit Capability}
 _{International Standard Package}
Advantages
 _{High Power Density}
 _{Low Gate Drive Requirement}
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250A, V_GE = 0V
V_GE(th)
I_C = 250A, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150C
I_GES
V_CE = 0V, V_GE = 20V
V_CE(sat)
I_C = 75A, V_GE = 15V, Note 1
T_J = 150C
Characteristic Values
Min. Typ. Max.
1200
V
3.5
6.0 V
25 A
1 mA
100 nA
1.85
2.27
2.20 V
V
Applications
 _{Power Inverters}
 _UPS
 _{Motor Drives}
 _SMPS
 _{PFC Circuits}
 _{Battery Chargers}
 _{Welding Machines}
 _{Lamp Ballasts}
© 2016 IXYS CORPORATION, All Rights Reserved
DS100720(4/16)