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IXYH20N120C3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – High-Speed IGBT for 20-50 kHz Switching | |||
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1200V XPTTM IGBT
GenX3TM w/ Diode
IXYH20N120C3D1
High-Speed IGBT
for 20-50 kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1Mï
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10ï
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
36
A
17
A
20
A
88
A
10
A
400
mJ
ICM = 40
A
ï£ @VCE VCES
230
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
6
g
Symbol
Test Conditions
(TJ = 25ï°C, Unless Otherwise Specified)
BVCES
IC = 250ïA, VGE = 0V
VGE(th)
IC = 250ïA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 125ï°C
IGES
VCE = 0V, VGE = ï±20V
VCE(sat)
IC = 20A, VGE = 15V, Note 1
TJ = 150ï°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
25 ïA
350 μA
ï ï ï ï ï ï ï ï ï ï ï ï ï ï±100 nA
3.4 V
4.0
V
VCES = 1200V
IC110 = 17A
V
CE(sat)
ï ï ï£
ï 3.4V
tfi(typ) = 108ns
TO-247 AD
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
ï¬ Optimized for Low Switching Losses
ï¬ Square RBSOA
ï¬ Positive Thermal Coefficient of
Vce(sat)
ï¬ Anti-Parallel Ultra Fast Diode
ï¬ Avalanche Rated
ï¬ International Standard Package
Advantages
ï¬ High Power Density
ï¬ Low Gate Drive Requirement
Applications
ï¬ High Frequency Power Inverters
ï¬ UPS
ï¬ Motor Drives
ï¬ SMPS
ï¬ PFC Circuits
ï¬ Battery Chargers
ï¬ Welding Machines
ï¬ Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100485B(8/13)
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