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| IXYF30N450 Datasheet, PDF (1/4 Pages) IXYS Corporation – Advance Technical Information | |||
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Advance Technical Information
High Voltage XPTTM IGBT IXYF30N450
(Electrically Isolated Tab)
VCES =
IC110 =
VCE(sat) ï£
4500V
17A
3.9V
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1Mï
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 15ï
Clamped Inductive Load
PC
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
50/60Hz, 1 Minute
Maximum Ratings
4500
V
4500
V
± 20
V
± 30
V
23
A
17
A
190
A
ICM = 90
A
3600
V
230
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
20..120 / 4.5..27
4000
Nm/lb.in.
V~
5
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
Note 2, TJ = 100°C
IGES
VCE = 0V, VGE = ± 25V
VCE(sat)
IC = 30A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
4500
V
3.0
5.0 V
25 μA
100
μA
±200 nA
3.2
3.9 V
4.5
V
ISOPLUS i4-PakTM
12
5
Isolated Tab
1 = Gate
2 = Emitter
5 = Collector
Features
ï¬ Silicon Chip on Direct-Copper Bond
(DCB) Substrate
ï¬ Isolated Mounting Surface
ï¬ 4000V~ Electrical Isolation
ï¬ High Blocking Voltage
ï¬ High Peak Current Capability
ï¬ Low Saturation Voltage
Advantages
ï¬ Low Gate Drive Requirement
ï¬ High Power Density
Applications
ï¬ Switch-Mode and Resonant-Mode
Power Supplies
ï¬ Uninterruptible Power Supplies (UPS)
ï¬ Laser Generators
ï¬ Capacitor Discharge Circuits
ï¬ AC Switches
© 2013 IXYS CORPORATION, All Rights Reserved
DS100569(11/13)
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