IXYB82N120C3H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – 1200V XPTTM IGBT GenX3TM w/ Diode

1200V XPT^TM IGBT
GenX3^TM w/ Diode
IXYB82N120C3H1
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_LRMS
I_C110
I_F110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
1200
V
1200
V
±20
V
±30
V
T_C = 25°C (Chip Capability)
Lead Current Limit
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 125°C, R_G = 2Ω
Clamped Inductive Load
T_C = 25°C
164
A
160
A
82
A
42
A
320
A
41
A
800
mJ
I_CM = 164
A
≤ @V_CE V_CES
1040
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Force
30..120 / 6.7..27
N/lb.
10
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 82A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
50 μA
3 mA
±100 nA
2.75
3.50
3.20 V
V
V_CES =
I_C110 =
V ≤ _CE(sat)
t_fi(typ) =
1200V
82A
3.2V
93ns
PLUS264^TM
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{Anti-Parallel Ultra Fast Diode}
z _{Positive Thermal Coefficient of}
Vce(sat)
z _{Avalanche Rated}
z _{High Current Handling Capability}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100355E(6/13)