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IXYA8N90C3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – 900V XPTTM IGBT | |||
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900V XPTTM IGBT
GenX3TM w/ Diode
High-Speed IGBT
for 20-50 kHz Switching
IXYA8N90C3D1
IXYP8N90C3D1
VCES = 900V
IC110 = 8A
V
CE(sat)
ï ï ï£
ï 3.0V
tfi(typ) = 130ns
TO-263 AA (IXYA)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1Mï
Continuous
Transient
900
V
900
V
±20
V
±30
V
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 30ï
Clamped Inductive Load
TC = 25°C
20
A
8
A
12
A
48
A
4
A
15
mJ
ICM = 16
A
ï£ @VCE VCES
125
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Torque (TO-220)
Mounting Force (TO-263)
1.13/10 Nm/lb.in.
10..65 / 2.2..14.6
N/lb.
TO-263
TO-220
2.5
g
3.0
g
Symbol
Test Conditions
(TJ = 25ï°C, Unless Otherwise Specified)
BVCES
IC = 250ïA, VGE = 0V
VGE(th)
IC = 250ïA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 125ï°C
IGES
VCE = 0V, VGE = ï±20V
VCE(sat)
IC = 8A, VGE = 15V, Note 1
TJ = 125ï°C
Characteristic Values
Min. Typ. Max.
950
V
3.5
6.0 V
60 ïA
400 μA
ï ï ï ï ï ï ï ï ï ï ï ï ï ï±100 nA
2.15
2.60
3.00 V
V
G
E
C (Tab)
TO-220AB (IXYP)
GC E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
ï¬ Optimized for Low Switching Losses
ï¬ Square RBSOA
ï¬ Positive Thermal Coefficient of
Vce(sat)
ï¬ Anti-Parallel Ultra Fast Diode
ï¬ Avalanche Rated
ï¬ International Standard Packages
Advantages
ï¬ High Power Density
ï¬ Low Gate Drive Requirement
Applications
ï¬ High Frequency Power Inverters
ï¬ UPS
ï¬ Motor Drives
ï¬ SMPS
ï¬ PFC Circuits
ï¬ Battery Chargers
ï¬ Welding Machines
ï¬ Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100400C(12/14)
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