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IXXN200N60B3 Datasheet, PDF (1/6 Pages) IXYS Corporation – Preliminary Technical Information
Preliminary Technical Information
XPTTM 600V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 10-30kHz Switching
IXXN200N60B3
E
VCES =
IC110 =
V ≤ CE(sat)
tfi(typ) =
600V
160A
1.7V
110ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability )
Leads Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGEC= 15V, TVJ = 150°C, RG = 1Ω
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 10Ω, Non Repetitive
TC = 25°C
50/60Hz
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
600
V
600
V
±20
V
±30
V
280
A
200
A
160
A
1000
A
100
A
1
J
ICM = 400
A
≤ @VCE VCES
10
μs
940
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 150°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
600
V
3.5
6.0 V
50 μA
3 mA
±200 nA
1.40
1.58
1.70 V
V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z Optimized for Low Conduction and
Switching Losses
z miniBLOC, with Aluminium Nitride
Isolation
z International Standard Package
z Isolation Voltage 2500V~
z Optimized for 10-30kHz Switching
z Square RBSOA
z Avalanche Rated
z Short Circuit Capability
z High Current Handling Capability
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100453A(02/13)