IXXN100N60B3H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – XPTTM 600V IGBT

XPT^TM 600V IGBT
GenX3^TM w/ Diode
IXXN100N60B3H1
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_F110
I_CM
I_A
E_AS
SSOA
(RBSOA)
t_sc
(SCSOA)
P_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Calability)
T_C = 90°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 2Ω
Clamped Inductive Load
V_GE = 15V, V_CE = 360V, T_J = 150°C
R_G = 10Ω, Non Repetitive
T_C = 25°C
50/60Hz
I_ISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
E
Maximum Ratings
600
V
600
V
±20
V
±30
V
170
A
100
A
50
A
440
A
50
A
600
mJ
I_CM = 200
A
≤ @V_CE V_CES
10
μs
500
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 70A, V_GE = 15V, Note 1
T_J = 150°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
50 μA
4 mA
±100 nA
1.50
1.77
1.80 V
V
V_CES =
I_C90
=
V ≤ _CE(sat)
t_fi(typ) =
600V
100A
1.80V
150ns
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z _{Optimized for Low Switching Losses}
z _{International Standard Package}
z _{Square RBSOA}
z _{Isolation Voltage 2500V~}
z _{Anti-Parallel Ultra Fast Diode}
z _{Optimized for 10-30kHz Switching}
z _{Avalanche Rated}
z _{Short Circuit Capability}
z _{High Current Handling Capability}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100421B(04/13)