IXXK200N65B4 Datasheet, PDF (1/6 Pages) IXYS Corporation – Preliminary Technical Information

Preliminary Technical Information
XPT^TM 650V IGBT
GenX4^TM
Extreme Light Punch Through
IGBT for 10-30kHz Switching
IXXK200N65B4
IXXX200N65B4
V_CES = 650V
I_C110 = 200A
V
CE(sat)

1.7V
t_fi(typ) = 80ns
TO-264 (IXXK)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_LRMS
I_C110
I_CM
SSOA
(RBSOA)
t_sc
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1M
Continuous
Transient
Maximum Ratings
650
V
650
V
±20
V
±30
V
T_C = 25°C (Chip Capability)
Lead Current Limit
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 150°C, R_G = 1
Clamped Inductive Load
V_GE = 15V, V_CE = 360V, T_J = 150°C
R_G = 10, Non Repetitive
T_C = 25°C
480
A
160
A
200
A
1100
A
I_CM = 400
A
 @V_CE V_CES
10
μs
1630
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in
N/lb
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 4mA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 160A, V_GE = 15V, Note 1
T_J = 150°C
Characteristic Values
Min. Typ. Max.
650
V
4.0
6.5 V
25 μA
2 mA
±200 nA
1.4
1.7 V
1.6
V
G
C
E
Tab
PLUS247 (IXXX)
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
 _{Optimized for 10-30kHz Switching}
 _{Square RBSOA}
 _{Short Circuit Capability}
 _{International Standard Packages}
 _{High Current Handling Capability}
Advantages
 _{High Power Density}
 _{Low Gate Drive Requirement}
Applications
 _{Power Inverters}
 _UPS
 _{Motor Drives}
 _SMPS
 _{PFC Circuits}
 _{Battery Chargers}
 _{Welding Machines}
 _{Lamp Ballasts}
© 2014 IXYS CORPORATION, All Rights Reserved
DS100518C(6/14)