IXXK110N65B4H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – XPTTM 650V GenX4TM

XPT^TM 650V GenX4^TM IXXK110N65B4H1
w/ Sonic Diode
IXXX110N65B4H1
Extreme Light Punch Through
IGBT for 10-30kHz Switching
V_CES =
I_C110 =
V ≤ _CE(sat)
t_fi(typ) =
650V
110A
2.1V
85ns
TO-264 (IXXK)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_LRMS
I_C110
I_F110
I_CM
SSOA
(RBSOA)
t_sc
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1MΩ
Continuous
Transient
Maximum Ratings
650
V
650
V
±20
V
±30
V
T_C = 25°C (Chip Capability)
Terminal Current Limit
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
240
A
160
A
110
A
78
A
630
A
V_GE = 15V, T_VJ = 150°C, R_G = 2Ω
Clamped Inductive Load
I_CM = 220
A
≤ @V_CE V_CES
V_GE = 15V, V_CE = 360V, T_J = 150°C
R_G = 82Ω, Non Repetitive
10
μs
T_C = 25°C
880
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 110A, V_GE = 15V, Note 1
T_J = 150°C
Characteristic Values
Min. Typ. Max.
650
V
4.0
6.5 V
25 μA
3 mA
±100 nA
1.75
2.15
2.10 V
V
G
C
E
Tab
PLUS247 (IXXX)
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
z _{Optimized for 10-30kHz Switching}
z _{Square RBSOA}
z _{Short Circuit Capability}
z _{Anti-Parallel Sonic Diode}
z _{High Current Handling Capability}
z _{International Standard Packages}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
z _{High Frequency Power Inverters}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100502B(6/13)