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IXXK100N60C3H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – XPTTM 600V GenX3TM w/ Diode
Preliminary Technical Information
XPTTM 600V
GenX3TM w/ Diode
IXXK100N60C3H1
IXXX100N60C3H1
Extreme Light Punch Through
IGBT for 20-60kHz Switching
VCES =
IC90
=
V ≤ CE(sat)
tfi(typ) =
600V
100A
2.20V
75ns
TO-264 (IXXK)
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC90
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
Maximum Ratings
600
V
600
V
±20
V
±30
V
TC= 25°C ( Chip Capability )
170
Terminal Current Limit
120
TC = 90°C
100
TC = 110°C
65
TC = 25°C, 1ms
340
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2Ω
Clamped Inductive Load
50
600
ICM = 200
≤ @VCE VCES
VGE= 15V, VCE = 360V, TJ = 150°C
10
RG = 10Ω, Non Repetitive
TC = 25°C
695
-55 ... +150
150
-55 ... +150
Maximum Lead Temperature for Soldering
300
1.6 mm (0.062in.) from Case for 10s
260
Mounting Torque (TO-264)
1.13/10
Mounting Force (PLUS247)
20..120 /4.5..27
A
A
A
A
A
A
mJ
A
μs
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 70A, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
50 μA
4 mA
±100 nA
1.68
1.97
2.20 V
V
G
C
E
Tab
PLUS247 (IXXX)
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
z Optimized for 20-60kHz Switching
z Square RBSOA
z Avalanche Rated
z Short Circuit Capability
z Anti-Parallel Ultra Fast Diode
z High Current Handling Capability
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2011 IXYS CORPORATION, All Rights Reserved
DS100283A(01/11)