IXXH80N65B4H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – XPTTM 650V IGBT

XPT^TM 650V IGBT
GenX4^TM w/ Sonic
Diode
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
IXXH80N65B4H1
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
SSOA
(RBSOA)
t_sc
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1M
Continuous
Transient
T_C = 25°C (Chip Capability)
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 150°C, R_G = 3
Clamped Inductive Load
V_GE = 15V, V_CE = 360V, T_J = 150°C
R_G = 82, Non Repetitive
T_C = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650
V
650
V
±20
V
±30
V
160
A
80
A
62
A
430
A
I_CM = 160
A
 @V_CE V_CES
10
μs
625
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250A, V_GE = 0V
V_GE(th)
I_C = 250A, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150C
I_GES
V_CE = 0V, V_GE = 20V
V_CE(sat)
I_C = 80A, V_GE = 15V, Note 1
T_J = 150C
Characteristic Values
Min. Typ. Max.
650
V
4.0
6.5 V
50 A
4 mA
100 nA
1.65
2.00
2.10 V
V
V_CES = 650V
I_C110 = 80A
V
CE(sat)

2.1V
t_fi(typ) = 63ns
TO-247 AD
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
 _{Optimized for 5-30kHz Switching}
 _{Square RBSOA}
 _{Anti-Parallel Sonic Diode}
 _{Short Circuit Capability}
 _{International Standard Package}
Advantages
 _{High Power Density}
 _{Extremely Rugged}
 _{Low Gate Drive Requirement}
Applications
 _{Power Inverters}
 _UPS
 _{Motor Drives}
 _SMPS
 _{PFC Circuits}
 _{Battery Chargers}
 _{Welding Machines}
 _{Lamp Ballasts}
© 2015 IXYS CORPORATION, All Rights Reserved
DS100528B(02/15)