IXXH75N60B3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – XPTTM 600V IGBT

XPT^TM 600V IGBT
GenX3^TM w/ Diode
IXXH75N60B3D1
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
I_A
E_AS
SSOA
(RBSOA)
t_sc
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 5Ω
Clamped Inductive Load
V_GE= 15V, V_CE = 360V, T_J = 150°C
R_G = 22Ω, Non Repetitive
T_C = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
600
V
600
V
±20
V
±30
V
160
A
75
A
30
A
300
A
30
A
500
mJ
I_CM = 150
A
≤ @V_CE V_CES
10
μs
750
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 60A, V_GE = 15V, Note 1
T_J = 150°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
25 μA
3 mA
±100 nA
1.60
2.00
1.85 V
V
V_CES =
I_C110 =
V ≤ _CE(sat)
t_fi(typ) =
600V
75A
1.85V
125ns
TO-247 AD
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
z _{Optimized for 5-30kHz Switching}
z _{Square RBSOA}
z _{Anti-Parallel Ultra Fast Diode}
z _{Avalanche Capability}
z _{Short Circuit Capability}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{175°C Rated}
z _{Extremely Rugged}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100328B(01/13)