IXXH50N60B3 Datasheet, PDF (1/6 Pages) IXYS Corporation – XPTTM 600V IGBTs

XPT^TM 600V IGBTs
GenX3^TM
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
IXXA50N60B3
IXXP50N60B3
IXXH50N60B3
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
t_sc
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
M_d
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1M
Continuous
Transient
600
V
600
V
±20
V
±30
V
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 5
Clamped Inductive Load
V_GE= 15V, V_CE = 360V, T_J = 150°C
R_G = 22, Non Repetitive
T_C = 25°C
120
A
50
A
200
A
25
A
200
mJ
I_CM = 100
A
 @V_CE V_CES
10
μs
600
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
°C
260
°C
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
10..65 / 2.2..14.6
1.13 / 10
2.5
3.0
6.0
N/lb.
Nm/lb.in.
g
g
g
Symbol
Test Conditions
(T_J = 25C, Unless Otherwise Specified)
BV_CES
I_C = 250A, V_GE = 0V
V_GE(th)
I_C = 250A, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150C
I_GES
V_CE = 0V, V_GE = 20V
V_CE(sat)
I_C = 36A, V_GE = 15V, Note 1
T_J = 150C
Characteristic Values
Min. Typ. Max.
600
V
3.5
6.0 V
25 A
2 mA
100 nA
1.55
1.80
1.80 V
V
© 2013 IXYS CORPORATION, All Rights Reserved
V_CES = 600V
I_C110 = 50A
V
CE(sat)

1.80V
TO-263 (IXXA)
G
E
TO-220 (IXXP)
C (Tab)
GC _E
TO-247 (IXXH)
C (Tab)
G
CE
C (Tab)
G = Gate
C = Collector
E = Emitter Tab = Collector
Features
 _{Optimized for 5-30kHz Switching}
 _{Square RBSOA}
 _{Avalanche Capability}
 _{Short Circuit Capability}
 _{International Standard Packages}
Advantages
 _{High Power Density}
 _{175°C Rated}
 _{Extremely Rugged}
 _{Low Gate Drive Requirement}
 _{Easy to Parallel}
Applications
 _{Power Inverters}
 _UPS
 _{Motor Drives}
 _SMPS
 _{PFC Circuits}
 _{Battery Chargers}
 _{Welding Machines}
 _{Lamp Ballasts}
DS100301C(8/13)