|
IXXH40N65B4H1 Datasheet, PDF (1/8 Pages) IXYS Corporation – XPTTM 650V IGBT | |||
|
XPTTM 650V IGBT
GenX4TM w/ Sonic
Diode
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
IXXH40N65B4H1
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1Mï
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 150°C, RG = 10ï
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C
RG = 82ï, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650
V
650
V
±20
V
±30
V
120
A
40
A
40
A
240
A
ICM = 80
A
ï£ @VCE VCES
10
μs
455
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25ï°C, Unless Otherwise Specified)
BVCES
IC = 250ïA, VGE = 0V
VGE(th)
IC = 250ïA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
TJ = 150ï°C
IGES
VCE = 0V, VGE = ï±20V
VCE(sat)
IC = 40A, VGE = 15V, Note 1
TJ = 150ï°C
Characteristic Values
Min. Typ. Max.
650
V
4.0
6.5 V
50 ïA
3 mA
ï ï ï ï ï ï ï ï ï ï ï ï ï ï±100 nA
1.50
1.78
2.00 V
V
VCES = 650V
IC110 = 40A
V
CE(sat)
ï ï ï£
ï 2.0V
tfi(typ) = 54ns
TO-247 AD
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
ï¬ Optimized for 5-30kHz Switching
ï¬ Square RBSOA
ï¬ Anti-Parallel Sonic Diode
ï¬ Avalanche Rated
ï¬ Short Circuit Capability
ï¬ International Standard Package
Advantages
ï¬ High Power Density
ï¬ Extremely Rugged
ï¬ Low Gate Drive Requirement
Applications
ï¬ Power Inverters
ï¬ UPS
ï¬ Motor Drives
ï¬ SMPS
ï¬ PFC Circuits
ï¬ Battery Chargers
ï¬ Welding Machines
ï¬ Lamp Ballasts
© 2014 IXYS CORPORATION, All Rights Reserved
DS100544B(12/14)
|
▷ |