IXXA30N65C3HV Datasheet, PDF (1/6 Pages) IXYS Corporation – Preliminary Technical Information

Preliminary Technical Information
XPT^TM 650V IGBT
GenX3^TM
IXXA30N65C3HV
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
V_CES =
I_C110 =
V ≤ _CE(sat)
t_fi(typ) =
650V
30A
2.2V
32ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
I_A
E_AS
SSOA
(RBSOA)
t_sc
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 150°C, R_G = 10Ω
Clamped Inductive Load
V_GE = 15V, V_CE = 360V, T_J = 150°C
R_G = 82Ω, Non Repetitive
T_C = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Maximum Ratings
650
V
650
V
±20
V
±30
V
52
A
30
A
113
A
20
A
250
mJ
I_CM = 48
A
≤ @V_CE V_CES
10
μs
230
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
2.5
g
TO-263
G
E
D (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z _{Optimized for 20-60kHz Switching}
z _{Square RBSOA}
z _{Avalanche Capability}
z _{Short Circuit Capability}
z _{High Voltage Package}
Advantages
z _{High Power Density}
z _{175°C Rated}
z _{Extremely Rugged}
z _{Low Gate Drive Requirement}
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 24A, V_GE = 15V, Note 1
T_J = 150°C
Characteristic Values
Min. Typ. Max.
650
V
3.0
5.5 V
10 μA
250 μA
±100 nA
1.85
2.30
2.20 V
V
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100525A(04/13)