IXUC100N055 Datasheet, PDF (1/2 Pages) IXYS Corporation – Electrically Isolated Back Surface

ADVANCE TECHNICAL INFORMATION
Trench Power MOSFET IXUC100N055
ISOPLUS220^TM
Electrically Isolated Back Surface
V_DSS =
I_D25 =
R_DS(on) =
55 V
100 A
7.7 mΩ
ISOPLUS 220^TM
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_GS
I_D25
I_D90
I_S25
I_S90
I_D(RMS)
E_AS
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
F_C
Weight
Symbol
R_DS(on)
V_GS(th)
I_DSS
I_GSS
T_J = 25°C to 150°C
Continuous
55
V
±20
V
T_C = 25°C; Note 1
T_C = 90°C, Note 1
100
A
80
A
T_C = 25°C; Note 1, 2
100
A
T_C = 90°C, Note 1, 2
Package lead current limit
T_C = 25°C
t _{TC = 25°C}
-ou ^{1.6 mm (0.062 in.) from case for 10 s}
RMS leads-to-tab, 50/60 Hz, t = 1 minute
e ^{Mounting force with clips}
70
A
50
A
500
mJ
150
W
-55 ... +175
°C
175
°C
-55 ... +125
°C
300
°C
2500
V~
11 ... 65 / 2.4 ...11 N/lb
2
g
as _{Test Conditions}
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
h _{VGS = 10 V, ID = ID90, Note 3}
p_{VDS = VGS, ID = 1 mA}
6.1
2
7.7 mΩ
4V
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
10 µA
0.1
mA
V_GS = ±20 V_DC, V_DS = 0
±200 nA
G
DS
Isolated back surface*
G = Gate,
S = Source
D = Drain,
* Patent pending
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Trench MOSFET
-
-
very
fast
lsowwitcRh_DiSn(ogn)
- usable intrinsic reverse diode
Low drain to tab capacitance(<15pF)
Unclamped Inductive Switching (UIS)
rated
Applications
Automotive 42V and 12V systems
- electronic switches to replace relays
& fuses
- choppers to replace series dropping
resistors used for motors, heaters, etc.
- inverters for AC drives
- DC-DC converters, e.g. 12V to 42V, etc.
Power supplies
- DC - DC converters
- Solar inverters
Battery powered systems
- choppers or inverters for motor control in
hand tools
- battery chargers
Advantages
Easy assembly: no screws or isolation
foils required
Space savings
High power density
© 2003 IXYS All rights reserved
DS98760(08/03)