IXTY44N10T Datasheet, PDF (1/5 Pages) IXYS Corporation – TrenchMVTM Power MOSFET

Preliminary Technical Information
TrenchMV^TM
Power MOSFET
IXTP44N10T
IXTY44N10T
N-Channel Enhancement Mode
Avalanche Rated
V_DSS =
I_D25 =
R_DS(on) ≤
100
44
30
V
A
mΩ
TO-220 (IXTP)
GD _S
D (TAB)
Symbol
Test Conditions
Maximum Ratings ^{TO-252 AA (IXTY)}
V_DSS
V_DGR
V_GSM
I_D25
I_L
I_DM
I_AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
T_SOLD
M
d
Weight
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Transient
100
V
100
V
± 30
V
T_C = 25° C
Package Current Limit, RMS
TO-252A
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
I
S
≤ I_DM,
di/dt
≤ 100
A/µs,
V
DD
≤
V
DSS
T
J
≤175° C,
R
G
=
18
Ω
T_C = 25° C
44
25
140
10
250
3
130
-55 ... +175
175
-40 ... +175
A
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
°C
260
°C
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
TO-220
TO-252
3
g
0.8
g
Symbol
Test Conditions
(T_J = 25° C unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
V_GS(th)
V_DS = V_GS, I_D = 25 µA
I_GSS
V_GS = ± 20 V, V_DS = 0 V
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
150°
C
R_DS(on)
V_GS = 10 V, I_D = 22 A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
85
V
2.5
4.5 V
± 100 nA
1 µA
100 µA
22
30 m Ω
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
© 2006 IXYS CORPORATION All rights reserved
DS99646 (11/06)