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IXTY1R6N100D2 Datasheet, PDF (1/5 Pages) IXYS Corporation – Depletion Mode MOSFET
Depletion Mode
MOSFET
N-Channel
Preliminary Technical Information
IXTY1R6N100D2
IXTA1R6N100D2
IXTP1R6N100D2
VDSX =
ID(on) >
≤ RDS(on)
1000V
1.6A
10Ω
TO-252 (IXTY)
Symbol
VDSX
VGSX
VGSM
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
Continuous
Transient
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
1000
V
±20
V
±30
V
100
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
0.35
g
2.50
g
3.00
g
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSX
VGS = - 5V, ID = 250μA
VGS(off)
VDS = 25V, ID = 100μA
IGSX
VGS = ±20V, VDS = 0V
IDSX(off)
VDS = VDSX, VGS= - 5V
TJ = 125°C
RDS(on)
VGS = 0V, ID = 0.8A, Note 1
ID(on)
VGS = 0V, VDS = 50V, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
- 2.5
- 4.5 V
±100 nA
2 μA
25 μA
10 Ω
1.6
A
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
© 2009 IXYS CORPORATION, All Rights Reserved
DS100185A(12/09)