IXTY1N80P Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated

Preliminary Technical Information
Polar^TM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
IXTA1N80P
IXTP1N80P
IXTU1N80P
IXTY1N80P
TO-220 (IXTP)
V_DSS =
I_D25 =
≤ R_DS(on)
800V
1A
14Ω
TO-251 (IXTU)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
G
S
(TAB)
G
DS
(TAB)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
TO-252
TO-251
Maximum Ratings
800
V
800
V
±20
V
±30
V
1
A
2
A
1
A
75
mJ
5
42
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.50
3.00
0.35
0.40
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 50μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
800
V
2.0
4.0 V
±100 nA
3 μA
30 μA
10
14 Ω
G
D
S
(TAB)
TO-252 (IXTY)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{International Standard Packages}
z _{Fast Intrinsic Rectifier}
z _{Avalanche Rated}
z _{Low Package Inductance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
© 2009 IXYS CORPORATION, All Rights Reserved
DS100112(02/09)