IXTX600N04T2 Datasheet, PDF (1/6 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

Advance Technical Information
TrenchT2^TM GigaMOS^TM
Power MOSFET
IXTK600N04T2
IXTX600N04T2
V_DSS =
I_D25 =
R_DS(on) ≤
40V
600A
1.5mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXTK)
Symbol
V_DSS
V_DGR
V_GSM
I_D25
I_L(RMS)
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Transient
T_C = 25°C (Chip Capability)
External Lead Current Limit
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
40
V
40
V
± 20
V
600
A
160
A
1600
A
200
A
3
J
1250
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250µA
V_GS(th)
V_DS = V_GS, I_D = 250µA
I_GSS
V_GS = ± 20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 100A, Notes 1 & 2
Characteristic Values
Min. Typ. Max.
40
V
1.5
3.5 V
± 200 nA
10 µA
1 mA
1.5 mΩ
G
D
Tab
S
PLUS247 (IXTX)
G
D
S
G = Gate
S = Source
Tab
D = Drain
Tab = Drain
Features
z _{International Standard Packages}
z _{High Current Handling Capability}
z _{Fast Intrinsic Diode}
z _{Avalanche Rated}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters and Off-Line UPS}
z _{Primary-Side Switch}
z _{High Speed Power Switching}
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100209(11/09)