IXTX5N250 Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode

Advance Technical Information
High Voltage Power
MOSFET w/ Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
Guaranteed FBSOA
IXTK5N250
IXTX5N250
V_DSS
I_D25
R_DS(on)
= 2500V
= 5A
< 8.8Ω
TO-264 (IXTK)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
2500
V
2500
V
±30
V
±40
V
5
A
20
A
2.5
A
2.5
J
960
W
-55 to +150
°C
150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = 2kV, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
2500
V
2.0
5.0 V
±200 nA
50 μA
4 mA
8.8 Ω
G
D
S
Tab
PLUS247 (IXTX)
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z _{Avalanche Rated}
z _{Fast Intrinsic Diode}
z _{Guaranteed FBSOA at 75°C}
z _{Low Package Inductance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{High Voltage Power Supplies}
z _{Capacitor Discharge}
z _{Pulse Circuits}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100280(08/10)