IXTX24N100 Datasheet, PDF (1/4 Pages) IXYS Corporation – N-Channel Enhancement Mode

Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTX24N100
V_DSS =
I_D25 =
≤ R_DS(on)
1000V
24A
400mΩ
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
Mounting Force
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
24
A
96
A
24
A
3
J
5
568
-55 ... +150
150
-55 ... +150
300
260
20..120 / 4.5..27
V/ns
W
°C
°C
°C
°C
°C
N/lb.
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.0
5.5 V
±100 nA
50 μA
1 mA
400 mΩ
PLUS247
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
• International Standard Package
• Low R_{DS (on)} HDMOS^TM Process
• Rugged Polysilicon Gate Cell Structure
• Avalanche Rated
• Low Package Inductance
Advantages
• PLUS 247^TM Package for Clip or Spring
Mounting
• Space Savings
• High Power Density
Applications
• DC-DC Converters
• Battery Chargers
• Switch-Mode and Resonant-Mode
Power Supplies
• DC Choppers
• AC Motor Drives
• Temperature and Lighting Controls
© 2010 IXYS CORPORATION, All rights reserved
DS99201C(09/10)