IXTV03N400S Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage Power MOSFETs

High Voltage
Power MOSFETs
Preliminary Technical Information
IXTH03N400
IXTV03N400S
V_DSS =
I_D25 =
≤ R_DS(on)
4000V
300mA
290Ω
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
TO-247 (IXTH)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
Mounting Force (PLUS220)
PLUS220
TO-247
Maximum Ratings
4000
V
4000
V
±20
V
±30
V
300
mA
800
mA
130
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
11..65 / 25..14.6
4
6
Nm/lb.in.
N/lb.
g
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = 0.8 • V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
4000
V
2.0
4.0 V
±100 nA
10 μA
750 μA
290 Ω
G
DS
D (Tab)
PLUS220SMD (IXTV_S)
G
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z _{International Standard Packages}
z _{Fast Intrinsic Rectifier}
z _{Molding Epoxies meet UL 94 V-0}
Flammability Classification
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{High Voltage Power Supplies}
z _{Capacitor Discharge}
z _{Pulse Circuits}
© 2012 IXYS CORPORATION, All Rights Reserved
DS100214A(04/12)